Energy dependence of defect energy levels in electron irradiated silicon

2014 We have studied through capacitance techniques (TSCAP and DLTS) the variation of the introduction rate of defects with the energy of the electrons in n-type silicon irradiated at room temperature. The results obtained provide a direct confirmation of the identification of the observed defects which was proposed in the literature : the Ec 0.39 and Ec 0.23 eV levels, attributed to the divacancy are found to have a threshold whose value is two times the threshold energy (25 eV) for vacancy-type defects (the Ec 0.43 eV level). The Ec 0.33 eV which is not yet identified should correspond to a vacancy-type defect since its threshold energy is 25 eV. REVUE DE PHYSIQUE APPLIQUÉE TOME 14, MARS 1979, PAGE Classification Physics Abstracts 61. 80Fe 71.55Fr